Phenomenological Model of Gate-Dependent Kink in I-V Characteristics of MoS2 Double-Gate FETs

A phenomenological model, accounting for interface states at metal-semiconductor contacts, is proposed to explain particular gate-bias-dependent kinking in I-V characteristics sometimes observed MoS 2 FETs. The effect studied double-gate FETs by varying top-gate voltage (V xmlns:xlink="http://www.w3.org/1999/xlink">TG ) and bottom-gate xmlns:xlink="http://www.w3.org/1999/xlink">BG ), with the semiconductor layer overlying source/drain (S/D) metal contacts contact regions. kink I xmlns:xlink="http://www.w3.org/1999/xlink">D -V small negative V but not large . model divides FET into S/D channel regions, bias-dependent resistance (R xmlns:xlink="http://www.w3.org/1999/xlink">SD xmlns:xlink="http://www.w3.org/1999/xlink">CHAN regions having an additional state distribution (additional any associated semiconductor/dielectric interfaces region) due imperfect where overlies metal. are modeled as a Gaussian of acceptor-like upper region bandgap. When R ≥ less negative), filling these increases creates since major component overall limiting drain current, Conversely, when << more does create highlights 1) need be accounted modeling FETs, 2) importance forming low density avoid kinks which detrimental analog applications.